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| NTE2378 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Low ON-State Resistance D Very High-Speed Switching D Converters Absolute Maximum Ratings: (TA = +25C) Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate-Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Allowable Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Width 10s, Duty Cycle 1%. Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and source. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-Source Leakage Current Cutoff Voltage Static Drain-Source On Resistance Forward Transconductance Symbol Test Conditions Min 900 - - 2 - 1.0 Typ - - - - 2.8 2.0 Max - 1.0 100 3 3.6 - Unit V mA nA V mho V(BR)DSS ID = 1mA, VGS = 0 IDSS IGSS VGS(off) RDS(on) gfs VGS = 0, VDS = 900V VDS = 0, VGS = 30V VDS = 10V, ID = 1mA VGS = 10V, ID = 2A VDS = 20V, ID = 2A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD IS = 5A, VGS = 0 VDD = 200V, ID = 2A, VGS = 10V, RGS = 50 VDS = 20V, f = 1MHz Test Conditions Min - - - - - - - - Typ 700 300 170 15 35 200 65 - Max - - - - - - - 1.8 Unit pf pf pf ns ns ns ns V .190 (4.82) .615 (15.62) D .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47) |
Price & Availability of NTE2378
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